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GaN Electronics covers developments in III-N semiconductor-based electronics for high power and high speed RF applications. The book thoroughly examines the material properties of these polar materials, the state of the art in substrates, epitaxial growth, device technology, modeling, and circuit examples. It concludes with an overview of integration and packaging. The book is based on nearly a decade of materials and electronics research at the leading nitride research institution in Europe. This comprehensive monograph and tutorial is an excellent training tool for graduate students of electrical engineering, communication engineering, and physics. It is also recommended for materials, device, and circuit engineers in research and industry.
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